汇报安排
汇报题目:参加IEEE NEMS 2017 参会报告
汇报时间:2017年4月19日(星期三) 19:30
汇报地点:科技园西五楼A302
汇报人:郭鑫、王鹏、白民宇、高文迪、李华峰
会议安排
会议名称:12th annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems
会议时间:April 9-12 2017
会议地点:UCLA, Los Angeles, California, USA
会议简介:The IEEE-NEMS is a premier conference series sponsored by the IEEE Nanotechnology Council focusing on the promotion of advanced research areas related to MEMS, nanotechnology, and molecular technology. Prior conferences were held in Matsushima Bay and Sendai (Japan, 2016), Xian (China, 2015), Hawaii (USA, 2014), Suzhou (China, 2013), Kyoto (Japan, 2012), Kaohsiung (Taiwan, 2011), Xiamen (China, 2010), Shenzhen (China, 2009), Hainan Island (China, 2008), Bangkok (Thailand, 2007), and Zhuhai (China, 2006). The IEEE-NEMS Conference typically attracts over 350 attendees with participants from more than 20 countries and regions worldwide.
会议交流工作
Oral Presentation: A Novel Piezoresistive Sensitive Structure for Micromachined High-pressure Sensors
报告人:郭鑫
Oral Presentation: High Performance Piezoresistive Accelerometer based on the Slot Etching in the EB(eight-beam) Structure
报告人:王鹏
Post Presentation: Electrostatic Force Research Concerning Material Property and Electric Condition by Simulation and Experiment
报告人:白民宇
Oral Presentation: A Novel Mems Force Sensor Based On Laterally Movable Gate Array Field Effect Transistor(LMGAFET)
报告人:高文迪
Post Presentation: A MEMS-Based Flow Sensor with Membrane Cantilever Beam Array Structure
报告人:李华峰
参加论文信息
Title: A Novel Piezoresistive Sensitive Structure for Micromachined High-pressure Sensors
Author: Xin Guo. Zhuangde Jiang, Libo Zhao et.al
Abstract: A novel piezoresistive sensitive structure for micromachined high-pressure sensors is proposed. This structure employs several small cavities in a silicon bulk. When high pressure applied on all faces of the bulk, stress emerges between two cavities. The calculation for the variation of the resistance caused by stress in three-dimensional (3D) structure was discussed. According to 3D piezoresistive effect, the performance of the sensitivity and nonlinearity affected by the dimensions of cavity structure had been clarified. The simulation results show the optimized position for the resistance is in lower region. This sensitive structure is suitable for micromachined high-pressure sensors and the performance study set a guideline for designing micromachined high-pressure sensors with multi-cavities working in different range.
Title: High Performance Piezoresistive Accelerometer based on the Slot Etching in the EB(eight-beam) Structure
Author: Peng Wang, Yulong Zhao*, You,Zhao, Qi Zhang and Zixi Wang
Abstract: Presented in this paper is a development of a high performance piezoresistive micro-accelerometer based on the slot etching in the EB (eight-beam) structure for the vibration detection of high speed spindle. The proposed SEB (slotted eight beams) structure consists of a proof mass supported by four slotted sensing beams and four suspension beams, which in order to improve the trade-off between the sensitivity and natural frequency of piezoresistive accelerometer. The mechanical model and its mathematical solution are established for calculating the sensitivity and natural frequency behavior of the designed structure. The FEA (finite element analysis) and experimental results demonstrate that incorporating slots into the beams have a great help to improve the trade-off between sensitivity and natural frequency of piezoresistive accelerometer.
Title: Electrostatic Force Research Concerning Material Property and Electric Condition by Simulation and Experiment
Author: Minyu Bai, Yulong Zhao
Abstract: Electrostatics especially electrostatic force (ESF) plays vital role in a variety of fields, concerning applications in colloid, plasma, and micro/nano device driving. The behaviors of ESF under different conditions were studied both by simulation and experiment in this paper. Voltages or charges were set to spheres of several materials, in order to explore how ESF was influenced by the electric condition and material property, especially permittivity.
The results showed that the ESF between two spheres were affected by a series of factors, including the distance between two spheres, the permittivity and radius of two spheres, voltages or charges set to the two spheres. Among all the results, some were beyond the common concept.
Title: A NOVEL MEMS FORCE SENSOR BASED ON LATERALLY MOVABLE GATE ARRAY FIELD EFFECT TRANSISTOR(LMGAFET)
Author: Wendi Gao, Libo Zhao, Zhuangde Jiang et.al
Abstract: In this research, we propose a novel MEMS sensor based on Laterally Movable Gate Array Field Effect Transistor (LMGAFET) for the measurement of nN force. By designing an array structure and adopting reasonable parameters and utilizing modified MOS3 model, the sensor’s proved to have high sensitivity of 0.107 mA/nN, low cross-axis sensitivity and excellent linearity. Besides, a modified MOS3 model is presented and utilized to demonstrate operation behavior of the sensor. This sensor with the ability of measuring nN force can be widely used in evaluate biophysical properties measurement of cells or tissues.
Title: A MEMS-Based Flow Sensor with Membrane Cantilever Beam Array Structure
Author: Bian Tian, Huafeng Li, Ning Yang, Hanyue Liu and Yulong Zhao
Abstract: This paper analyzed four different structures of flow sensor, the rectangular membrane cantilever beam array structure, the trapezoidal membrane cantilever beam array structure, the inverted trapezoidal membrane cantilever beam array structure and the triangular membrane cantilever beam array structure. The numerical and simulation results show that the inverted trapezoidal membrane cantilever beam array structure is the best among these four structures. The measuring range of the designed flow sensor and the effective optimization design are also discussed in this paper. The results reveal that the ideal measuring range of designed flow sensor is 0.3 m/s to 3.5 m/s.
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