汇报题目：IEEE NEMS 2019 (The 14th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems) 参会报告

汇报时间：2019年4月20日（星期六） 18:30

汇报地点：曲江校区西五楼A228会议室

汇报人：李杰、赵一鹤、于明智、王路、赵曼、吴晨、黄琳雅、韩香广

会议名称：The 14th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems

会议时间：11-14 Apirl 2019

会议地点：Bangkok, Thailand

会议简介：The 14th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) will be held from 11-14, April 2019 in Bangkok, at Marriott Marquis Queen’s Park, Thailand.

The IEEE-NEMS is a premier conference series sponsored by the IEEE Nanotechnology Council focusing on the promotion of advanced research areas related to MEMS, nanotechnology, and molecular technology. Prior conferences were held in Singapore (2018), Los Angeles (USA, 2017), Matsushima Bay and Sendai (Japan, 2016), Xi’an (China, 2015), Hawaii (USA, 2014), Suzhou (China, 2013), Kyoto (Japan, 2012), Kaohsiung (Taiwan, 2011), Xiamen (China, 2010), Shenzhen (China, 2009), Hainan Island (China, 2008), Bangkok (Thailand, 2007), and Zhuhai (China, 2006). The IEEE-NEMS Conference typically attracts over 600 attendees with participants from more than 20 countries and regions worldwide.

We invite contributions describing the latest scientific and technological research results in subjects including, but not limited to:

Micro/Nano Electro-Mechanical Systems (M/NEMS)

Micro/Nano/Molecular Fabrication

Nanomaterials

Nanomaterial Based Devices and Systems

Nanophotonics and Nanoscale Imaging

Nanoscale Robotics, Assembly, and Automation

Molecular Sensors, Actuators, and Systems

Micro/Nano Fluidics

Micro/Nano Mechanics

Nanobiology/Nanomedicine

参加论文信息

Title：A Through-Hole Capacitive Micromachined Ultrasonic Transdcuer with High Perfromance

Author：Jie Li, Libo Zhao*, Dejiang Lu, Zhikang Li, Yihe Zhao, Tingzhong Xu, Shuaishuai Guo, Jiuhong Wang,Yulong Zhao, Zhuangde Jiang.

Abstract：Generally, CMUTs are composed of numbers of independent cells, whose edges are clamped on the posts. Such structure is characterized with high resonant frequency and high sensitivity. However, too much parasitic capacitance is often induced for the CMUTs because of the posts between cells, causing a low electromechanical coupling coefficient. At the same time, the collapse voltage is too high and does not have low power consumption characteristics. A through-hole CMUTs (TH-CMUTs) structure is proposed, which is clamped at the four corners of membrane. It has many advantages on the premise of ensuring the ultrasonic emission power and output current. Since the stiffness of TH-CMUTs structure is reduced, its collapse voltage can be greatly reduced. The original membrane on the post is suspended, then the original parasitic capacitance is transformed into the effective capacitance to increase the electromechanical coupling coefficient. Finally, the structure also has the characteristics of high filling ratio. All the advantages of proposed TH-CMUTs structure are simulated and validated.

Title：Smith Matching for CMUTs-based Biochemical Resonant Sensor

Author：Yihe Zhao, Libo Zhao, Rahman Hebibul*, Zhikang Li, Jie Li, Tingzhong Xu, Shuaishuai Guo, Jiuhong Wang, Yulong Zhao, Zhuangde Jiang.

Abstract：A LC smith matching method for capacitive micromachined ultrasonic transducers (CMUTs) was presented for biochemical application. We completed the fabrication of CMUTs based on the direct bonding technology. A modified Butterworth van-Dyke (BvD) model with lumped elements for functionalized CMUTs were proposed to fit the electrical impedance and phase of CMUTs, which were accurately measured by the impedance analyzer. The series and parallel frequencies of CMUTs were obtained. It is difficult for the functionalized CMUTs to achieve the transmission from capacitive reactance to inductive reactance at relatively low DC voltage. And the proposed LC matching network can optimize the properties of impedance, phase, resistance, especially reactance near the resonant region. This is important for the real-time oscillator design, which needs strict condition for the Barkhausen stability criterion of gain and phase.

Title：A High-g Triaxial Piezoresistive Accelerometer with Sensing Beams in Pure Axial Deformation

Author：Mingzhi Yu, Libo Zhao*, Chen Jia, Hongyan Wang, Yulong Zhao, Zhuangde Jiang

Abstract：We present a novel structure of three-axis high-g piezoresisitive accelerometer with pure axial deformation sensitive beams, which greatly improves the performance of accelerometer. The accelerometer's measurement range is 100,000 g. The advantages of novel structure are as follows. Firstly, the separation of sensor support structure and sensitive structure greatly weakens the coupling relationship between natural frequency and sensitivity. Secondly, the sensitive beam is always in a purely axially deformed state, to make full use of the deformation energy of sensitive beam, that greatly improves the measuring sensitivity of accelerometer. Then we simulated the main performance parameters of proposed accelerometer and optimized the structural parameters of novel structure. The measuring sensitivity of proposed accelerometer is simulated with the value of 1.2 μV/g/3V, and its resonant frequency is greater than 1 MHz. Finally, the fabrication process is designed for the accelerometer chip.

Title：MEMS Piezoelectric Vibration Energy Harvester with In-Plane PZT Bimorph

Author：Lu Wang, Libo Zhao, Zhuangde Jiang, Xiang Li, Zihang Chen, Maeda Ryutaro

Abstract：In order to overcome the drawbacks of conventional out-plane vibration MEMS-PVEH. We have presented an in-plane vibration MEMS-PVEH with bimorph PZT by bonding bulk PZT. Performance of two kinds of PVEHs were studied by finite element method using COMSOL software. Including vibration modes, resonant frequencies, open circuit voltage, peak power, optimal resistance, and the static stress at gravity load of the structure. Compare to the conventional out-plane vibration PVEH, the proposed in-plane vibration PVEH has lower resonant frequency of 122 Hz, higher peak power of 50 μW. It has advantages of heavier proof mass, good performance PZT bimorph, thinner cantilever thickness, convenient electrodes lead, and has the frame to protect the oscillator. Besides, in-plane vibration PVEH is convenient to be fabricated by planar graphical MEMS process.

Title：One kind of wide bandwidth and high radiation efficiency antenna for microwave manipulation of NV color centers

Author：Man Zhao, Qijing Lin*, Liangquan Zhu, Libo Zhao , Zhuangde Jiang

Abstract：Nowadays, studies based on quantum effect of nitrogen-vacancy (NV ) color centers in diamond have received extensive attention, such as quantum computing, quantum information and quantum precision measurement. In these fields, microwave manipulation is one kind of critical technology in which antenna was used to radiate special magnetic pulse to manipulate the quantum state of NV color centers. In this study, High Frequency Structure Simulator software (HFSS ) is used to design microstrip antenna whose resonance frequency is 2.87GHz. Based on simulation and experiment, near field radiation of the sample is optimized to improve its magnetic field. Besides, wide bandwidth and high radiation efficiency is achieved through a sandwich structure. This antenna will be helpful in guiding the development of hybrid quantum devices of NV centers, especially for precision measurement sensing.

Title：Development of a 4H-SiC Pressure Sensor for High Temperature Applications

Author：Xudong Fang, Chen Wu ,Xin Guo, Libo Zhao, Yulong Zhao and Zhuangde Jiang.

Abstract：A pressure sensor based on 4H-SiC was developed for working over 500°C. The designed pressure range is 0-7MPa for special aviation applications. As demonstrated with experimental results, the sensor shows excellent accuracy and repeatability from 30°C to 500°C. Compared with previous studies, in MEMS processing of the sensor chip, a suitable alloy system was determined to form a stable high-temperature ohmic contact. Besides, the chip was packaged with mechanical structure and ceramic adhesive of similar thermal expansion coefficient to avoid thermal stress induced when increasing temperature.

Title：A Novel Resonator Based on In-plane Mode for Fluid Density and Viscosity Measurements

Author：Linya Huang, Libo Zhao, Dejiang Lu*, Zhikang Li, Yulong Zhao, Zhuangde Jiang

Abstract：A novel micro-electromechanical resonator based on in-plane mode was presented for the measurements of fluid density and viscosity. With the purpose of enhancing the quality factor of micro resonator, double vibrators were connected by a center beam to not only drive the resonant structure in in-plane vibration mode but also reduce the vibration stress to be concentrated in the fixed terminal. Finite element analysis and numerical simulation were conducted to analyze and optimize the resonator structure. Based on the simulated analysis, its quality factor reached highly to 96 in ethanol with the resonant frequency of approximately 34 kHz. And the stress amplitude up to MPa on the center beam had strong relationship with both of the fluid characteristics and output voltage, which benefited to improve the measurement accuracy of fluid density and viscosity based on the piezoresistive principle.

Title：A High Accuracy Resonant Pressure Sensor with Lateral Driven and Piezoresistive Detection

Author：Xiangguang Han，Libo Zhao，Xuejiao Li，Ping Yang，Hongyan Wang，Zhuangde Jiang

Abstract：A novel structure of resonant pressure sensor with integrated comb is presented with the electrostatic drive and piezoresistive detection. This design realizes double symmetric ‘H’ beams assembled in one pressure diaphragm to realize symmetric-lateral vibration. When a pressure applied, the Z-direction offset between fixed and movable combs is less than 0.2 m, which is beneficial for close-loop control. The novel structure combined with piezoresistive detection and coupling beam is presented, which can obtain pure tensile stress or compressive stress on the detection beam with low noise, adjacent modal output will be easy to filter. The simulated sensor non-linearity after polynomial fitting is less than 0.01%FS with the pressure range of 0-300 kPa, and its measuring sensitivity is up to -25 Hz/kPa.